Résumé (Français et/ou Anglais) :
Chalcopyrites are promising materials in the fields of electronics, optoelectronics and photonics, because of their potential and excellent electronic properties, linear and non-linear optics properties. This type of material is recently widely used in photovoltaic solar cells based on thin films or as multijunction solar cells, among these semiconductor materials; we have the chalcopyrites III-III-V2 which broadly used in recent years in high efficiency solar cells fabrication.
The aim of this work is to study the optoelectronic properties of GaInP2, GaInAs2 and GaInN2, used as an absorber material in photovoltaic cells.
We will use the FP-LAPW method under the WIEN2k environment, which is based on the DFT theory to calculate and analyze their optoelectronic properties, then we will try to modulate these properties in the proposal to design a new solar cells based on these chalcopyrites.