Electronic and optical properties of the AlxGa1-xAs1-yNy materials, applied for vertical cavity surface emitting lasers (VCSELs) and solar cells

dc.contributor.authorMERABET Boualem
dc.contributor.authorEncadreur: Abid Hamza
dc.date.accessioned2025-01-27T07:57:32Z
dc.date.available2025-01-27T07:57:32Z
dc.date.issued2012-11-25
dc.descriptionDoctorat en Sciences
dc.description.abstractAbstract: The aim of my study is to investigate electronic and optical proprieties of the AlxGa1-xAs1-yNy thin layers utilized as quantum wells (QW) grown on GaAs substrates, applied for solar cells and vertical cavity surface emitting lasers (VCSELs), in order to design high efficiency solar cell and long wavelength optoelectronic device applications. The method of calculations adopted is “Full Potential – Linear Augmented Plane Waves”, using the Wien2k code under Inux environment. This study will confront the available theoretical and experimental works in the optimization and design of solar cells and LW-VCSELs research areas.
dc.identifier.urihttps://dspace.univ-sba.dz/handle/123456789/2210
dc.titleElectronic and optical properties of the AlxGa1-xAs1-yNy materials, applied for vertical cavity surface emitting lasers (VCSELs) and solar cells
dc.typeThesis
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